Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Published:2013-01-07 Issue:1 Volume:102 Page:012103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ho Szu-Han,Chang Ting-Chang,Wu Chi-Wei,Lo Wen-Hung,Chen Ching-En,Tsai Jyun-Yu,Liu Guan-Ru,Chen Hua-Mao,Lu Ying-Shin,Wang Bin-Wei,Tseng Tseung-Yuen,Cheng Osbert,Huang Cheng-Tung,Sze Simon M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4773479

Reference17 articles.

1. Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain

2. On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs

3. Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation

4. Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress

5. Temperature-Dependent Biaxial Compressive Strain Effect on p-MOSFETs

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