Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs

Author:

Zhang Wenqi,Wang Tzuo-Li,Huang Yan-Hua,Cheng Tsu-Ting,Chen Shih-Yao,Li Yi-Ying,Hsu Chun-Hsiang,Lai Chih-Jui,Yeh Wen-Kuan,Yang Yi-LinORCID

Funder

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-Fin SOI FINFETs;Paul;IEEE IEDM Tech. Dig.,2013

2. Strained SOI FINFET SRAM design;Kerber;IEEE Electron Dev. Lett.,2013

3. Logic circuit function realization by one transistor;Dai;Nano Lett.,2012

4. Modeling novel double-in-plane gate electric-double-layer thin-film and nanoscale transistors;Dai;Nano Lett.,2011

5. 16-nm multigate and multifin MOSFET device and SRAM circuits, proc;Chen;IEEE ISNE,2010

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks;ECS Journal of Solid State Science and Technology;2023-03-01

2. Correlation of HCD and Percolation Paths in FinFETs: Study of RDF and MGG Impacts Through 3-D Particle-Based Simulation;IEEE Transactions on Device and Materials Reliability;2022-09

3. Source/Drain Activation for Flexible Poly-Si Nanoscale pFETs with a Laser-Buffer Layer by CO2 laser Annealing;ECS Journal of Solid State Science and Technology;2022-06-01

4. Metal Migration Induced Breakdown from Gate Contact in Bulk FinFET Devices;2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2021-09-15

5. Study on device reliability for P-type FinFETs with different fin numbers;Vacuum;2020-11

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3