Metal Migration Induced Breakdown from Gate Contact in Bulk FinFET Devices-Reference-Cited by-同舟云学术

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Metal Migration Induced Breakdown from Gate Contact in Bulk FinFET Devices

Published:2021-09-15 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Yang Xin,Qing Yihong,Chang-Liao Kuei-Shu,Qiao Yuchong,Wang Chaolun,Liu Zhiwei,Li Luoyong,Tsai Chihang,Wu Yongren,Xie Yazhen,Yu Weisong,Wu Xing

Funder

Science and Technology Commission of Shanghai Municipality

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9617229/9617230/09617380.pdf?arnumber=9617380

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1. The Application of Hybrid Energy system (Hydrogen Fuel cell, wind, and solar) in shipping;Renewable Energy Focus;2023-09

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