Modeling Novel Double-in-Plane Gate Electric-Double-Layer Thin-Film and Nanoscale Transistors-Reference-Cited by-同舟云学术

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Modeling Novel Double-in-Plane Gate Electric-Double-Layer Thin-Film and Nanoscale Transistors

Published:2011-08-22 Issue:9 Volume:11 Page:3987-3990
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Dai Mingzhi¹,Wan Qing¹

Affiliation:

1. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl202368z

Reference18 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

4. Silicon nanowire solar cells

5. Single and Tandem Axial p-i-n Nanowire Photovoltaic Devices

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