Transfer Learning-Based Artificial Intelligence-Integrated Physical Modeling to Enable Failure Analysis for 3 Nanometer and Smaller Silicon-Based CMOS Transistors-Reference-Cited by-同舟云学术

Transfer Learning-Based Artificial Intelligence-Integrated Physical Modeling to Enable Failure Analysis for 3 Nanometer and Smaller Silicon-Based CMOS Transistors

Published:2021-06-28 Issue:7 Volume:4 Page:6903-6915
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Pan Jieming¹^ORCID,Low Kain Lu¹,Ghosh Joydeep¹,Jayavelu Senthilnath²,Ferdaus Md Meftahul²,Lim Shang Yi¹,Zamburg Evgeny¹,Li Yida¹,Tang Baoshan¹,Wang Xinghua¹,Leong Jin Feng¹,Ramasamy Savitha²,Buonassisi Tonio³^ORCID,Tham Chen-Khong¹,Thean Aaron Voon-Yew¹

Affiliation:

1. Department of Electrical and Computer Engineering (ECE), National University of Singapore (NUS), 117583, Singapore

2. Institute for Infocomm Research (I2R)|Agency for Science, Technology and Research (A*STAR), 138632, Singapore

3. Singapore-MIT Alliance for Research & Technology, 138602, Singapore

Funder

Agency for Science, Technology and Research Accelerated Materials Development for Manufacturing

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.1c00960