Study on device reliability for P-type FinFETs with different fin numbers-Reference-Cited by-同舟云学术

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Study on device reliability for P-type FinFETs with different fin numbers

Published:2020-11 Issue: Volume:181 Page:109601
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Yang Yi-Lin,Zhang Wenqi,Yan Shen-Yi,Yu Yin-Hung,Fang Zhen-Yu,Yeh Wen-Kuan

Funder

Ministry of Science and Technology

Taiwan Semiconductor Research Institute

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference12 articles.

1. Strained SOI FINFET SRAM Design

2. The Observation of Width Quantization Impact on Device Performance and Reliability for High-k/Metal Tri-Gate FinFET

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1. Low‐power FinFET based boost converter design using dynamic threshold body biasing technique;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-08-21

2. The Impact of Hysteresis Effect on Device Characteristic and Reliability for Various Fin-Widths Tri-Gate Hf0.5Zr0.5O2 Ferroelectric FinFET;Crystals;2023-04-06

3. Ultra low power offering 14 nm bulk double gate FinFET based SRAM cells;Sustainable Computing: Informatics and Systems;2022-09

4. Analysis and characterization of layout dependent effect for advance FinFET circuit design;Microelectronics Journal;2022-07

5. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes;Technical Physics Letters;2021-12-16

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