Ultra low power offering 14 nm bulk double gate FinFET based SRAM cells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,General Computer Science
Reference40 articles.
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design of Enhanced Reversible 9T SRAM Design for the Reduction in Sub-threshold Leakage Current with14nm FinFET Technology;ACM Transactions on Design Automation of Electronic Systems;2023-10-28
2. A low-power SRAM design with enhanced stability and ION/IOFF ratio in FinFET technology for wearable device applications;International Journal of Electronics;2023-07-25
3. A Comparative Analyze of FinFET and Bulk MOSFET SRAM Design;2022 International Conference on Applied Physics and Computing (ICAPC);2022-09
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