Examination of hot-carrier stress induced degradation on fin field-effect transistor-Reference-Cited by-同舟云学术

Examination of hot-carrier stress induced degradation on fin field-effect transistor

Published:2014-02-24 Issue:8 Volume:104 Page:083505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Yi-Lin,Zhang Wenqi,Yen Tzu-Sung,Hong Jia-Jian,Wong Jie-Chen,Ku Chao-Chen,Wu Tai-Hsuan,Wang Tzuo-Li,Li Chien-Yi,Wu Bing-Tze,Lin Shih-Hung,Yeh Wen-Kuan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4866437

Reference11 articles.

1. Short channel effects on gallium nitride/gallium oxide nanowire transistors

2. Strained SOI FINFET SRAM Design

3. Superior PBTI Reliability for SOI FinFET Technologies and Its Physical Understanding

4. Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors

5. Examination of the time power law dependencies in hot carrier stressing of n-MOS transistors

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