Author:
Yang Yi-Lin,Zhang Wenqi,Chen Yu-Lin,Yeh Wen-Kuan
Funder
Ministry of Science and Technology of Taiwan
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. The RTN measurement technique on leakage path finding in advanced high-k metal gate CMOS devices;Hsieh,2015
2. in proc. The observation of BTl-induced RTN traps in inversion and accumulation modes on Hf02 high-k metal gate 28nm CMOS devices;Wu,2014
3. Intrinsic hot-carrier degradation of nMOSFETs by decoupling PBTI component in 28nm high-K/metal gate stacks;Hsu,2012
4. Comparative study of low-frequency noise in 0.18 μm and 0.35 μm gate-length nMOSFETs with gate area of 1.1 μm2;Hu;Microelectron. Reliab.,2016
5. Random telegraph noise from resonant tunneling at low temperatures;Li;Sci. Rep.,2018