Study on Intrinsic Hot Carrier Degradation of FinFETs with Different Stress Conditions and Fin Numbers by Decoupling PBTI Component-Reference-Cited by-同舟云学术

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Study on Intrinsic Hot Carrier Degradation of FinFETs with Different Stress Conditions and Fin Numbers by Decoupling PBTI Component

Published:2020-03-20 Issue:3 Volume:9 Page:033006
ISSN:2162-8777
Container-title:ECS Journal of Solid State Science and Technology
language:
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Yang Yi-Lin^ORCID,Zhang Wenqi,Yeh Wen-Kuan

Funder

Ministry of Science and Technology, Taiwan

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/2162-8777/ab7ea4/pdf

Reference16 articles.

1. Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits

2. A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

3. A Novel PNPN-Like Z-Shaped Tunnel Field- Effect Transistor With Improved Ambipolar Behavior and RF Performance

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment;Applied Physics Letters;2024-07-22

2. The Impact of Hysteresis Effect on Device Characteristic and Reliability for Various Fin-Widths Tri-Gate Hf0.5Zr0.5O2 Ferroelectric FinFET;Crystals;2023-04-06

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