A 35 ns cycle time 3.3 V only 32 Mb NAND flash EEPROM-Reference-Cited by-同舟云学术

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A 35 ns cycle time 3.3 V only 32 Mb NAND flash EEPROM

Published:1995 Issue:11 Volume:30 Page:1157-1164
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Iwata Y.,Imamiya K.,Sugiura Y.,Nakamura H.,Oodaira H.,Momodomi M.,Itoh Y.,Watanabe T.,Araki H.,Narita K.,Masuda K.,Miyamoto J.-I.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx1/4/10183/00475702.pdf?arnumber=475702

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NAND Flash technology status and perspectives;Semiconductor Memories and Systems;2022

2. 3D Stacked NAND Flash Memories;3D Flash Memories;2016

3. Introduction;Nand Flash Memory Technologies;2015-12-25

4. Multi-bit NAND Flash memories for ultra high density storage devices;Advances in Non-volatile Memory and Storage Technology;2014

5. High-Capacity NAND Flash Memories: XLC Storage and Single-Die 3D;Memory Mass Storage;2010-11-30

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