High-Capacity NAND Flash Memories: XLC Storage and Single-Die 3D-Reference-Cited by-同舟云学术

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High-Capacity NAND Flash Memories: XLC Storage and Single-Die 3D

Published:2010-11-30 Issue: Volume: Page:289-334
ISSN:
Container-title:Memory Mass Storage
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Author:

Micheloni Rino,Crippa Luca,Grossi Alessandro,Tessariol Paolo

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-14752-4_7.pdf

Reference56 articles.

1. Cappelletti P et al (1999) Flash memories. Kluwer, Norwood, MA

2. Campardo G, Micheloni R, Novosel D (2005) VLSI-design of non-volatile memories. Springer, Berlin

3. Tanaka T et al (Nov 1994) A quick intelligent page-programming architecture and a shielded bitline sensing method for 3 V-only NAND flash memory. Solid State Circuits IEEE J 29(11):1366–1373

4. Itoh Y et al (Feb 1989) An Experimental 4 Mb CMOS EEPROM with a NAND Structured Cell Solid-State Circuits Conference, 1989. Digest of Technical Papers. 36th ISSCC, IEEE International, pp 134–135

5. Suh K-D et al (Nov 1995) A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme. IEEE J Solid Stare Circuits 30(11):1149-1156.

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