NAND Flash technology status and perspectives-Reference-Cited by-同舟云学术

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NAND Flash technology status and perspectives

Published:2022 Issue: Volume: Page:119-158
ISSN:
Container-title:Semiconductor Memories and Systems
language:
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Author:

Hemink Gertjan,Goda Akira

Publisher

Elsevier

Reference133 articles.

1. New ultra high density eprom and flash eeprom with nand structure cell;Masuoka,1987

2. Flash memory—The great disruptor!;Harari,2012

3. A 3.3V 1Gb multi-level NAND flash memory with non-uniform threshold voltage distribution;Cho,2001

4. A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640μs and 800MB/s I/O rate;Lee,2016

5. A 16Gb 3b/Cell NAND flash memory in 56nm with 8MB/s write rate;Li,2008

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Random Flip Bit Aware Reading for Improving High-Density 3-D NAND Flash Performance;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-05

2. Ultra-fast switching memristors based on two-dimensional materials;Nature Communications;2024-03-14

3. Fabrication of a wider bandgap θ-Al₂O₃ by oxidation of ultrathin AlN films for leakage current reduction;Japanese Journal of Applied Physics;2024-02-16

4. Preventing oxide precipitation in selective wet etching of Si3N4 for 3D-NAND structure fabrication: The role of bubbles;Microelectronic Engineering;2024-01

5. Cryogenic Storage Memory with High‐Speed, Low‐Power, and Long‐Retention Performance;Advanced Electronic Materials;2023-04-14

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