Preventing oxide precipitation in selective wet etching of Si3N4 for 3D-NAND structure fabrication: The role of bubbles

Author:

Zhang Hao,Yang Haiqiang,Yuan Fang,Liu Bo,Yang Qiang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Improvement of SiO2 surface morphology during the selective Si3N4 etching in the multi-layered 3D NAND Si3N4/SiO2 stack structures by the generation of CO2 gas through the control of redox reaction;Kim;Surf. Interfaces,2022

2. Etching of silicon nitride in 3D NAND structures;Bassett;ECS Trans.,2015

3. Redeposition mechanism on silicon oxide layers during selective etching process in 3D NAND manufacture;Zhou;J. Ind. Eng. Chem.,2023

4. Research progress of SiO2 regrowth during selective etching process in 3D NAND manufacture procedure;Wu;J. Electrochem.,2021

5. 5-NAND flash technology status and perspectives;Hemink,2022

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