Identification of MOSFET Working State Based on the Stress Wave and Deep Learning
Author:
Affiliation:
1. College of Electrical and Information Engineering, Hunan University, Changsha, China
2. School of Ocean Engineering, Jiangsu Ocean University, Lianyungang, China
Funder
General Projects of National Natural Science Foundation of China
Key Laboratory of Control of Power Transmission and Conversion [Shanghai Jiaotong University (SJTU)], Ministry of Education
Science and Technology Program of Changsha
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/19/9717300/09750097.pdf?arnumber=9750097
Reference28 articles.
1. Acoustic Emission in Power Semiconductor Modules—First Observations
2. Acoustic Emission-Based Experimental Analysis of Mechanical Stress Wave in IGBT Device
3. Analysis of the Stress-Wave Influence Parameters of Silicon MOSFET Under 300V Drain Source Voltage
4. Real-Time Acoustic Emission Monitoring of Wear-Out Failure in SiC Power Electronic Devices During Power Cycling Tests
5. Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging
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