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Analysis of the Stress-Wave Influence Parameters of Silicon MOSFET Under 300V Drain Source Voltage

  • Published:2021-09-15 Issue:18 Volume:21 Page:20107-20118
  • ISSN:1530-437X
  • Container-title:IEEE Sensors Journal
  • language:
  • Short-container-title:IEEE Sensors J.

Author:

Bai YunORCID,Shen HaoningORCID,He YunzeORCID,Wang LeiORCID,Liu Fei,Geng Xuefeng,Ren DantongORCID,Liu Songyuan,Dang Xiangzhao,Li YunjiaORCID

Funder

General Projects of National Natural Science Foundation of China

Science and Technology Program of Changsha

Science and Technology Talent Special Program of Hunan Science and Technology Innovation Plan

Open Fund of State Key Laboratory of Electrical Equipment and Insulation of Xi’an Jiaotong University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of the Influence of Temperature on Stress Waves of Cascode GaN HEMT;IEEE Sensors Journal;2024-04-15

2. Theoretical Study on the Generation of Switching Stress Waves in Power Semiconductor Devices;IEEE Transactions on Power Electronics;2023-03

3. Investigation of the Influence of Temperature on Stress Waves at the Turn-Off Moment in IGBT;IEEE Transactions on Instrumentation and Measurement;2023

4. Detection and Analysis of Stress Wave in MOSFET Under Gate-Source Overvoltage Failure;IEEE Transactions on Device and Materials Reliability;2023

5. Characteristic Analysis of the Stress Wave of Silicon MOSFET under Gate-Source Overvoltage Failure;2022 International Conference on Sensing, Measurement & Data Analytics in the era of Artificial Intelligence (ICSMD);2022-11-30
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