Analysis of the Influence of Temperature on Stress Waves of Cascode GaN HEMT-Reference-Cited by-同舟云学术

Analysis of the Influence of Temperature on Stress Waves of Cascode GaN HEMT

Published:2024-04-15 Issue:8 Volume:24 Page:12131-12141
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Chang Shan¹^ORCID,He Yunze¹^ORCID,Wang Hongjin¹^ORCID,Wang Guangxin¹^ORCID,Geng Xuefeng¹^ORCID,Liu Songyuan²^ORCID,Li Qiying¹^ORCID,Tang Longhai¹^ORCID,Lai Wei³^ORCID,Zhang Kai⁴^ORCID

Affiliation:

1. College of Electrical and Information Engineering, Hunan University, Changsha, China

2. China Electric Power Research Institute, Wuhan, China

3. College of Electrical Engineering, Chongqing University, Chongqing, China

4. College of Automotive and Transportation Engineering, Shenzhen Polytechnic, Shenzhen, China

Funder

National Natural Science Foundation of China

Shenzhen Science and Technology Program

Open Project of National Key Laboratory of Power Transmission and Transformation Equipment Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7361/10500449/10458939.pdf?arnumber=10458939

Reference34 articles.

1. An Accurate Datasheet-Based Full-Characteristics Analytical Model of GaN HEMTs for Deadtime Optimization

2. Health Assessment Method for Electronic Components Subject to Condition Monitoring and Hard Failure

3. Health State Estimation and Remaining Useful Life Prediction of Power Devices Subject to Noisy and Aperiodic Condition Monitoring

4. Investigations on Averaging Mechanisms of Virtual Junction Temperature Determined by V CE (T) Method for IGBTs

5. Gate–Emitter Pre-threshold Voltage as a Health-Sensitive Parameter for IGBT Chip Failure Monitoring in High-Voltage Multichip IGBT Power Modules