N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz-Reference-Cited by-同舟云学术

N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz

Published:2023-07 Issue:7 Volume:33 Page:1011-1014
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Arias-Purdue Andrea¹^ORCID,Rowell Petra V.¹,King Casey M.¹,Carter Andrew D.¹,Paniagua Andres¹,Shinohara Keisuke¹^ORCID,Bergman Josh¹,Urteaga Miguel E.¹^ORCID,Miller Nicholas C.²^ORCID,Elliott Michael³,Gilbert Ryan³,Herrault Florian⁴,Green Daniel⁴,Buckwalter James F.⁴

Affiliation:

1. Teledyne Scientific Company, Thousand Oaks, CA, USA

2. Air Force Research Laboratory Sensors Directorate, Wright-Patterson Air Force Base, Dayton, OH, USA

3. KBR, Wright-Patterson Air Force Base, Dayton, OH, USA

4. Pseudolithic, Inc.,, Santa Barbara, CA, USA

Funder

ONR

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10174789/10098257.pdf?arnumber=10098257

Reference23 articles.

1. Surmounting W-band Scalar Load-Pull Limitations Using the ASM-HEMT Model for Millimeter-Wave GaN HEMT Technology Large-Signal Assessment

2. First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz

3. Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs

4. Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model

5. Accurate non-linear harmonic simulations at X-band using the ASM-HEMT model validated with NVNA measurements

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2. N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P_out at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-07

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4. A Heterogeneously-Integrated Ka-Band, N-Polar Gallium Nitride HEMT Amplifier;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

5. Research and Development of Compound Semiconductor Materials and Devices for Wireless Communication;The Journal of The Institute of Electrical Engineers of Japan;2024-06-01