Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs-Reference-Cited by-同舟云学术

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Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs

Published:2021-11-07 Issue: Volume: Page:
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Container-title:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Chiocchetta Francesca,Calascione Claudia,De Santi Carlo,Sharma Chandan,Rampazzo Fabiana,Zheng Xun,Romanczyk Brian,Guidry Matt,Li Haoran,Keller Stacia,Mishra Umesh,Meneghesso Gaudenzio,Meneghini Matteo,Zanoni Enrico

Funder

Office of Naval Research

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9645059/9645074/09645107.pdf?arnumber=9645107

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-07

2. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability;IEEE Transactions on Electron Devices;2023

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