Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts-Reference-Cited by-同舟云学术

Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts

Published:2022-03 Issue:3 Volume:69 Page:1233-1241
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Agarwal Aditi¹^ORCID,Baliga B. Jayant¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09716762.pdf?arnumber=9716762

Reference19 articles.

1. Improving the specific on-resistance and shortcircuit ruggedness tradeoff of 1.2-kV-class SBDembedded SiC MOSFETs through cell pitch reduction and internal resistance optimization;kono;Proc Int Symp Power Semiconductor Devices,2021

2. 2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

3. Third Generation PRESiCE™ Technology for Manufacturing SiC Power Devices in a 6-Inch Commercial Foundry

4. Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures

5. Gallium Nitride and Silicon Carbide Power Devices

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1. Comparison and analysis on static and dynamic performance of 1.2-kV SiC planar MOSFETs with different cell topologies;Materials Science in Semiconductor Processing;2024-12

2. Design and characterization of cell topology effect on SiC VDMOSFETs for high power and frequency applications;Engineering Research Express;2024-03-01

3. High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18

4. 4H-SiC Trench Gate Lateral MOSFET With Dual Source Trenches for Improved Performance and Reliability;IEEE Transactions on Device and Materials Reliability;2023-03

5. Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET;IEEE Transactions on Power Electronics;2023