Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET-Reference-Cited by-同舟云学术

Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET

Published:2023 Issue: Volume: Page:1-15
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Gu Zhaoyuan¹^ORCID,Yang Mingchao¹,Yang Yi¹^ORCID,Liu Xihao¹^ORCID,Gao Mingyang¹,Qi Jinwei¹^ORCID,Liu Weihua¹^ORCID,Han Chuanyu¹,Geng Li¹^ORCID,Hao Yue²^ORCID

Affiliation:

1. School of Microelectronics, Xi'an Jiaotong University, Xi'an, China

2. School of Microelectronics, Xidian University, Xi'an, China

Funder

Key R&D Program of Shaanxi Province

Xi'an Science and Technology Bureau

Science and Technology Program of Shaanxi Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/4359240/10337796.pdf?arnumber=10337796

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