Third Generation PRESiCE™ Technology for Manufacturing SiC Power Devices in a 6-Inch Commercial Foundry-Reference-Cited by-同舟云学术

Third Generation PRESiCE™ Technology for Manufacturing SiC Power Devices in a 6-Inch Commercial Foundry

Published:2020 Issue: Volume:8 Page:1111-1117
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Baliga B. Jayant^ORCID

Funder

DOE and PowerAmerica to create a non-proprietary process for manufacturing SiC power devices at a commercial foundry to promote commercial adoption of SiC power devices

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8949832/09159545.pdf?arnumber=9159545

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