1200 V 14 mΩ SiC MOSFET with Low Specific On-Resistance of 3.3 mΩ cm2
Author:
Affiliation:
1. Fudan University,Academy for Engineering and Technology,Shanghai,P.R. China,200433
2. SiChain Semiconductors (Ningbo) Co., Ltd,Ningbo,P.R. China,315000
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10070854/10070925/10071073.pdf?arnumber=10071073
Reference18 articles.
1. Optimization of SiC UMOSFET Structure for Improvement of Breakdown Voltage and ON-Resistance
2. An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs
3. Design and Optimization of SiC Super-Junction MOSFET Using Vertical Variation Doping Profile
4. An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss
5. A 1-kV 4H-SiC Power DMOSFET Optimized for Low on-Resistance
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1. The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
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