High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs
Author:
Affiliation:
1. Xi’an Jiaotong University,School of Microelectronics,Xi’an,China
2. Xidian University,School of Microelectronics,Xi’an,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10241359/10241362/10241572.pdf?arnumber=10241572
Reference54 articles.
1. A trench/planar SiC MOSFET integrated with SBD (TPSBD) for low reverse recovery charge and low switching loss
2. SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode
3. SiC Power MOSFET with Monolithically Integrated Schottky Barrier Diode for Improved Switching Performances;dai;Proc 2017 PCIM Europe - Int Exhib Conf Power Electron Intel Motion Renew Energy Energy Manag,0
4. Low leakage current and high unipolar current density in a 4H-SiC trench gate MOSFET with integrated Schottky barrier diode
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