Impact of Gamma Radiations on Static, Pulsed <i>I–V</i>, and RF Performance Parameters of AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

Impact of Gamma Radiations on Static, Pulsed I–V, and RF Performance Parameters of AlGaN/GaN HEMT

Published:2022-05 Issue:5 Volume:69 Page:2299-2306
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Visvkarma Ajay Kumar¹^ORCID,Sehra Khushwant¹^ORCID,Chanchal ¹^ORCID,Laishram Robert²,Malik Amit²^ORCID,Sharma Sunil²,Kumar Sudhir²,Rawal D. S.²^ORCID,Vinayak Seema²,Saxena Manoj³^ORCID

Affiliation:

1. Department of Electronic Science, Semiconductor Device Research Laboratory, University of Delhi South Campus, New Delhi, India

2. Solid State Physics Laboratory, Defence Research and Development Organization, New Delhi, India

3. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09745736.pdf?arnumber=9745736

Reference46 articles.

1. Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs

2. The effect of different silicon nitride passivation on recopies on the DC characteristics of AlGaN/GaN HEMTs;laishram;Proc IEEE Int Conf Emerg Electron (ICEE),2014

3. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

4. Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices

5. Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures

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