Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures-Reference-Cited by-同舟云学术

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Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures

Published:2006-02-17 Issue:No. 8 Volume:45 Page:L224-L226
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Wenfei,Derluyn Joff,Germain Marianne,Leys Maarten,Degroote Stefan,Schreurs Dominique,Borghs Gustaaf

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs;Journal of Electronic Materials;2024-05-03

2. The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures;Materials Science and Engineering: B;2024-02

3. Effect of SiO₂ Surface Passivation on the Performance of GaN Polarization Superjunction Heterojunction Field Effect Transistors;physica status solidi (a);2023-12-27

4. Piezotronic Transistors and Arrays;Piezotronics and Piezo-Phototronics;2023

5. Impact of Gamma Radiations on Static, Pulsed I–V, and RF Performance Parameters of AlGaN/GaN HEMT;IEEE Transactions on Electron Devices;2022-05

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