Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs-Reference-Cited by-同舟云学术

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Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs

Published:2021-03 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Chiocchetta F.,Calascione C.,De Santi C.,Sharma C.,Rampazzo F.,Zheng X.,Romanczyk B.,Guidry M.,Li H.,Keller S.,Mishra U. K.,Meneghesso G.,Meneghini M.,Zanoni E.

Funder

Office of Naval Research (ONR)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405111.pdf?arnumber=9405111

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Challenges and Future Trends;GaN Technology;2024

3. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability;IEEE Transactions on Electron Devices;2023

4. A Π-shaped p-GaN HEMT for reliable enhancement mode operation;Microelectronics Reliability;2022-06

5. Impact of Gamma Radiations on Static, Pulsed I–V, and RF Performance Parameters of AlGaN/GaN HEMT;IEEE Transactions on Electron Devices;2022-05

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