Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects
Author:
Affiliation:
1. University of Padova,Department of Information Engineering,Padova,Italy
2. Transphorm Inc.,Goleta,CA,USA,93117
3. University of California Santa Barbara,Department of Electrical and Computer Engineering,Santa Barbara,USA
Funder
ONR
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529479.pdf?arnumber=10529479
Reference27 articles.
1. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
2. Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth
3. Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures
4. Record 94 GHz performance from N-polar GaN-on-Sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE
5. N-polar GaN epitaxy and high electron mobility transistors
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