Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

Published:2013-02-11 Issue:6 Volume:102 Page:062102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schwarz C.,Yadav A.,Shatkhin M.,Flitsiyan E.,Chernyak L.,Kasiyan V.,Liu L.,Xi Y. Y.,Ren F.,Pearton S. J.,Lo C. F.,Johnson J. W.,Danilova E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4792240

Reference11 articles.

1. Thermo-mechanical stability of wide-bandgap semiconductors: high temperature hardness of SiC, AlN, GaN, ZnO and ZnSe

2. Radiation hardness of gallium nitride

3. Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors

4. Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

5. Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

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