Investigation on Piezoresistive Effect of n-Type 4H-SiC Based on All-SiC Pressure Sensors
Author:
Affiliation:
1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
Funder
National Key Research and Development Project of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/9745626/09718595.pdf?arnumber=9718595
Reference46 articles.
1. 6H-SiC pressure sensor operation at 600°C
2. Optimal design of SiC piezoresistive pressure sensor considering material anisotropy
3. Experimental Investigation of Piezoresistive Effect in p-Type 4H–SiC
4. Design-dependent gauge factors of highly doped n-type 4H-SiC piezoresistors
5. Isotropic piezoresistance of p-type 4H-SiC in (0001) plane
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