Isotropic piezoresistance of p-type 4H-SiC in (0001) plane-Reference-Cited by-同舟云学术

Isotropic piezoresistance of p-type 4H-SiC in (0001) plane

Published:2018-07-02 Issue:1 Volume:113 Page:012104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nguyen Tuan-Khoa¹^ORCID,Phan Hoang-Phuong¹^ORCID,Dinh Toan¹^ORCID,Toriyama Toshiyuki²,Nakamura Koichi³⁴,Foisal Abu Riduan Md¹,Nguyen Nam-Trung¹^ORCID,Dao Dzung Viet¹⁵

Affiliation:

1. Queensland Micro- and Nanotechnology Centre, Griffith University, 170 Kessels Road, Brisbane, Queensland 4111, Australia

2. Department of Mechanical Engineering, College of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japan

3. Center for the Promotion of Interdisciplinary Education and Research, Kyoto University, Kyoto 615-8540, Japan

4. Department of Materials Science and Engineering, Egypt-Japan University of Science and Technology, New Borg El-Arab, Alexandria 21934, Egypt

5. School of Engineering and Built Environment, Griffith University, Parklands Drive, Gold Coast, Queensland 4215, Australia

Funder

Australian Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5037545

Reference27 articles.

1. Piezoresistance Effect in Germanium and Silicon

2. Stress-dependent hole effective masses and piezoresistive properties ofp-type monocrystalline and polycrystalline silicon

3. Highly sensitive p-type 4H-SiC van der Pauw sensor

4. Effects of strain on band structure and effective masses in MoS2

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