Highly sensitive p-type 4H-SiC van der Pauw sensor-Reference-Cited by-同舟云学术

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Highly sensitive p-type 4H-SiC van der Pauw sensor

Published:2018 Issue:6 Volume:8 Page:3009-3013
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Nguyen Tuan-Khoa¹²³⁴^ORCID,Phan Hoang-Phuong¹²³⁴,Han Jisheng¹²³⁴,Dinh Toan¹²³⁴^ORCID,Md Foisal Abu Riduan¹²³⁴,Dimitrijev Sima¹²³⁴,Zhu Yong¹²³⁴⁵,Nguyen Nam-Trung¹²³⁴^ORCID,Dao Dzung Viet¹²³⁴⁵

Affiliation:

1. Queensland Micro-Nanotechnology Centre

2. Griffith University

3. Brisbane

4. Australia

5. School of Engineering

Abstract

This paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices.

Funder

Australian Research Council

Australian National Fabrication Facility

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C7RA11922D

Reference28 articles.

1. Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: A Review

2. Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications

3. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

4. 4H-SiC Piezoresistive Pressure Sensors at 800 °C With Observed Sensitivity Recovery

5. Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

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4. Development of All-SiC Absolute Pressure Sensor Based on Sealed Cavity Structure;IEEE Sensors Journal;2021-12-15

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