Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating-Reference-Cited by-同舟云学术

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Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

Published:2016-06-28 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Phan Hoang-Phuong,Dinh Toan,Kozeki Takahiro,Qamar Afzaal,Namazu Takahiro,Dimitrijev Sima,Nguyen Nam-Trung,Dao Dzung Viet

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep28499.pdf

Reference46 articles.

1. Phan, H.-P., Dao, D. V., Nakamura, K., Dimitrijev, S. & Nguyen, N.-T. The piezoresistive effect of SiC for MEMS sensors at high temperatures: A review. J. Microelectromech. Syst. 24(6), 1663–1677 (2015).

2. Wright, N. G., Horsfall, A. B. & Vassilevski, K. Prospects for SiC electronics and sensors. Materials Today 11(1), 16–21 (2008).

3. Senesky, D. G., Jamshidi, B., Cheng, K. B. & Pisano, A. P. Harsh environment silicon carbide sensors for health and performance monitoring of aerospace systems: A review. IEEE Sensors J. 9(11), 1472–1478 (2009).

4. Nguyen, S. D. et al. MEMS capacitive flow sensor for natural gas pipelines. Sens. Actuators A. 231, 28–34 (2015).

5. Werner, M. et al. High-temperature sensors based on SiC and diamond technology. Sensors Update 5, 141–190 (1999).

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