4H-Silicon Carbide as an Acoustic Material for MEMS
Author:
Affiliation:
1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
Funder
Army Research Laboratory
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Acoustics and Ultrasonics,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/58/10287225/10144254.pdf?arnumber=10144254
Reference104 articles.
1. Substrate-decoupled, bulk-acoustic wave gyroscopes: Design and evaluation of next-generation environmentally robust devices
2. Temperature Dependence of Quality Factor in MEMS Resonators
3. Precision Deep Reactive Ion Etching of Monocrystalline 4H-SiCOI for Bulk Acoustic Wave Resonators with Ultra-Low Dissipation
4. Resonant pitch and roll silicon gyroscopes with sub-micron-gap slanted electrodes: Breaking the barrier toward high-performance monolithic inertial measurement units
5. Energy dissipation in micromechanical resonators
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1. 4H silicon carbide bulk acoustic wave gyroscope with ultra-high Q-factor for on-chip inertial navigation;Communications Engineering;2024-06-25
2. Stress-Modulated Control of TCF and Frequency Shift in 4H-SiC Beam Resonators for Enhanced Thermal Stability;2024-06-18
3. Application of bulk silicon carbide technology in high temperature MEMS sensors;Materials Science in Semiconductor Processing;2024-04
4. 4H-SiC Beam Resonators with Tailored Local Zero TCF;2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS);2024-01-21
5. TA 0.34Deg/Hour Bulk Acoustic Wave Gyroscope in 4H Silicon-Carbide with an Elevated-Temperature Enhanced Q-Factor of 4.6 Million;2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS);2024-01-21
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