6H-SiC pressure sensor operation at 600°C-Reference-Cited by-同舟云学术

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6H-SiC pressure sensor operation at 600°C

Published: Issue: Volume: Page:
ISSN:
Container-title:1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145)
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Author:

Ned A.A.,Okojie R.S.,Kurtz A.D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx4/5566/14900/00676799.pdf?arnumber=676799

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution of conductive phase in SiCN ceramics for high piezoresistivity performance at high temperatures;Ceramics International;2024-01

2. Temperature Characteristics of 4H-SiC Substrate and Thin-Film Resistor Applied in MEMS Piezoresistive Sensors;IEEE Sensors Journal;2023-12-15

3. Piezoresistive 4H-SiC Pressure Sensor With Diaphragm Realized by Femtosecond Laser;IEEE Sensors Journal;2022-06-15

4. Investigation on Piezoresistive Effect of n-Type 4H-SiC Based on All-SiC Pressure Sensors;IEEE Sensors Journal;2022-04-01

5. Boron doped SiC thin film on Silicon synthesized from polycarbosilane: a new lead free material for applications in piezosensors;Journal of Materials Science: Materials in Electronics;2021-09-13

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