Indium-Tin-Oxide Thin-Film Transistors With High Field-Effect Mobility (129.5 cm<sup>2</sup>/V⋅s) and Low Thermal Budget (150 °C)-Reference-Cited by-同舟云学术

Indium-Tin-Oxide Thin-Film Transistors With High Field-Effect Mobility (129.5 cm²/V⋅s) and Low Thermal Budget (150 °C)

Published:2023-12 Issue:12 Volume:44 Page:1999-2002
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Han Kaizhen¹^ORCID,Kang Yuye¹,Chen Xuanqi¹^ORCID,Chen Yue¹,Gong Xiao¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore (NUS), Cluny Road, Singapore

Funder

Singapore Ministry of Education

Advanced Research and Technology Innovation Centre (ARTIC) Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10330769/10305228.pdf?arnumber=10305228

Reference29 articles.

1. First Demonstration of Dual-Gated Indium Tin Oxide Transistors with Record Drive Current ~2.3 mA/μm at L ≈ 60 nm and V_DS = 1 V

2. 10-nm channel length indium-tin-oxide transistors with Ion = 1860 ?A/?m, Gm = 1050 ?S/?m at Vds = 1 V with BEOL compatibility;li;IEDM Tech Dig,2020

3. Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

4. Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

5. BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with Ion = 970 μA/μm and On/off Ratio Near 1011 at Vds = 0.5 V

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1. Passivated indium oxide thin-film transistors with high field-effect mobility (128.3 cm² V⁻¹ s⁻¹) and low thermal budget (200 °C);Journal of Physics D: Applied Physics;2024-08-09

2. BEOL-Compatible High-Performance Indium-Tin-Oxide Transistors Enabled by Quantum Confinement-Engineered Properties;IEEE Transactions on Electron Devices;2024-08

3. Enhancement of In₂O₃ Field-Effect Mobility Up To 152 cm².V⁻¹·s⁻¹Using HZO-Based Higher-k Linear Dielectric;2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2024-06-16

4. BEOL-Compatible In₂O₃ Thin-Film Transistor with Linear Dielectric ZrO₂ Achieving Dielectric Constant over 27 and Enhanced Field-Effect Mobility Up To 89.3 cm²·V⁻¹·s⁻¹;2024 IEEE Silicon Nanoelectronics Workshop (SNW);2024-06-15

5. High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation;Nano Letters;2024-06-05