First Demonstration of Dual-Gated Indium Tin Oxide Transistors with Record Drive Current ~2.3 mA/μm at L ≈ 60 nm and VDS = 1 V
Author:
Affiliation:
1. Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305
Funder
Stanford SystemX Alliance
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019544.pdf?arnumber=10019544
Reference16 articles.
1. High-performance flexible nanoscale transistors based on transition metal dichalcogenides
2. Scaled indium oxide transistors fabricated using atomic layer deposition
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