High-performance flexible nanoscale transistors based on transition metal dichalcogenides-Reference-Cited by-同舟云学术

High-performance flexible nanoscale transistors based on transition metal dichalcogenides

Published:2021-06-17 Issue:7 Volume:4 Page:495-501
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Daus Alwin,Vaziri Sam^ORCID,Chen Victoria,Köroğlu Çağıl,Grady Ryan W.,Bailey Connor S.^ORCID,Lee Hye Ryoung,Schauble Kirstin,Brenner Kevin,Pop Eric^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.nature.com/articles/s41928-021-00598-6.pdf

Reference58 articles.

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2. Akinwande, D., Petrone, N. & Hone, J. Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5678 (2014).

3. Myny, K. The development of flexible integrated circuits based on thin-film transistors. Nat. Electron. 1, 30–39 (2018).

4. Salvatore, G. A. et al. Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate. ACS Nano 7, 8809–8815 (2013).

5. Gurarslan, A. et al. Surface-energy-assisted perfect transfer of centimeter-scale monolayer and few-layer MoS2 films onto arbitrary substrates. ACS Nano 8, 11522–11528 (2014).

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