Biaxial Strain Transfer in Monolayer MoS2 and WSe2 Transistor Structures

Author:

Michail Antonios12ORCID,Yang Jerry A.3ORCID,Filintoglou Kyriakos4,Balakeras Nikolaos4,Nattoo Crystal Alicia3ORCID,Bailey Connor Scott3ORCID,Daus Alwin35,Parthenios John2ORCID,Pop Eric367ORCID,Papagelis Konstantinos24ORCID

Affiliation:

1. Department of Physics, University of Patras, Patras 26504, Greece

2. Institute of Chemical Engineering Sciences, Foundation for Research and Technology Hellas (FORTH − ICE/HT), Patras 26504, Greece

3. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

4. School of Physics, Department of Solid State Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece

5. Department of Microsystems Engineering, University of Freiburg, Freiburg 79110, Germany

6. Department of Materials Science, Stanford University, Stanford, California 94305, United States

7. Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States

Funder

National Science Foundation Graduate Research Fellowship Program

Foundation for Research and Technology-Hellas

Defense Advanced Research Projects Agency

Deutsche Forschungsgemeinschaft

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

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