High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation-Reference-Cited by-同舟云学术

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High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation

Published:2024-06-05 Issue:26 Volume:24 Page:7919-7926
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Han Kaizhen¹^ORCID,Kang Yuye¹^ORCID,Tu Yi-Hsin¹,Wu Chaoming¹,Wang Chengkuan¹,Liu Long¹,Zhang Gong¹,Chen Yue¹,Ni Kai²,Liang Gengchiau¹³,Gong Xiao¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117582

2. Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana 46556 United States

3. Industry Academia Innovation School, National Yang-Ming Chiao Tung University (NYCU), Hsinchu City 300093, Taiwan

Funder

Ministry of Education - Singapore

Semiconductor Research Corporation

National Science and Technology Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c01172

Reference41 articles.

1. The technology underpinning 5G

2. What should 6G be?

3. Schottky diode with cutoff frequency of 400 GHz fabricated in 0.18 [micro sign]m CMOS

4. Design and Characterization of 1.8–3.2 THz Schottky-Based Harmonic Mixers

5. An efficient Terahertz rectifier on the graphene/SiC materials platform

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