BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with Ion = 970 μA/μm and On/off Ratio Near 1011 at Vds = 0.5 V-Reference-Cited by-同舟云学术

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BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with Ion = 970 μA/μm and On/off Ratio Near 1011 at Vds = 0.5 V

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Li Shengman,Tian Mengchuan,Gu Chengru,Wang Runsheng,Wang Mengfei,Xiong Xiong,Li Xuefei,Huang Ru,Wu Yanqing

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993488.pdf?arnumber=8993488

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. BEOL-Compatible High-Performance Indium-Tin-Oxide Transistors Enabled by Quantum Confinement-Engineered Properties;IEEE Transactions on Electron Devices;2024-08

2. High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation;Nano Letters;2024-06-05

3. BEOL Compatible Ultra-Thin ITO Transistor With Performance Recoverable Capability by in Situ Electrothermal Annealing;IEEE Electron Device Letters;2024-05

4. High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region;IEEE Transactions on Electron Devices;2024-05

5. High-performance nano-scale InSnO transistors;Japanese Journal of Applied Physics;2024-01-10

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