High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region-Reference-Cited by-同舟云学术

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High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region

Published:2024-05 Issue:5 Volume:71 Page:2990-2994
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Guangan¹,Song Weijia¹,Yu Zuoxu²,Huang Tingrui²,Cao Jie²,Xu Yong¹,Sun Huabin²^ORCID,Sun Weifeng¹^ORCID,Wu Wangran²^ORCID

Affiliation:

1. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China

2. School of Electronic Science and Engineering and the National ASIC System Engineering Research Center, Southeast University, Nanjing, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10464214.pdf?arnumber=10464214

Reference32 articles.

1. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

2. Review of recent trends in flexible metal oxide thin-film transistors for analog applications

3. Investigation of Mechanical-Stress-Induced Electrical Failure of Oxide-Based Flexible Charge-Trap Memory Thin-Film Transistors Fabricated on Plastic Substrates

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Solution-processed metal-oxide thin-film transistors: a review of recent developments

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A normally off high-voltage InGaZnO transistor with drain offset region modulated by an InZnO layer;Applied Physics Letters;2024-08-05

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