Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors-Reference-Cited by-同舟云学术

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

Published:2020-12-29 Issue:1 Volume:21 Page:500-506
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Si Mengwei¹^ORCID,Hu Yaoqiao²^ORCID,Lin Zehao¹,Sun Xing³,Charnas Adam¹,Zheng Dongqi¹,Lyu Xiao¹,Wang Haiyan³^ORCID,Cho Kyeongjae²^ORCID,Ye Peide D.¹^ORCID

Affiliation:

1. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States

2. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States

3. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States

Funder

Defense Advanced Research Projects Agency

Air Force Office of Scientific Research

Semiconductor Research Corporation

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c03967

Reference33 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors

2. Nanometre-thin indium tin oxide for advanced high-performance electronics

3. Indium–Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

4. Chakraborty, W.; Grisafe, B.; Ye, H.; Lightcap, I.; Ni, K.; Datta, S. BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with Ion = 370 μA/μm, SS = 73 mV/dec and Ion/Ioff Ratio > 4 × 109. In Symposium on VLSI Technology; 2020; p TH2.1.

5. Wu, J.; Mo, F.; Saraya, T.; Hiramoto, T.; Kobayashi, M. A Monolithic 3D Integration of RRAM Array with Oxide Semiconductor FET for In-Memory Computing in Quantized Neural Network AI Applications. In Symposium on VLSI Technology; 2020; p THL.4.

Cited by 128 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In2O3 electrochemical transistors based on PtAu4/RGO nanocomposites functionalized gate for highly sensitive nitrite detection;Journal of Electroanalytical Chemistry;2024-10

2. Growth of high quality polycrystalline InGaO thin films by spray pyrolysis for coplanar thin-film transistors on polyimide substrate;Journal of Alloys and Compounds;2024-10

3. Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy;Advanced Electronic Materials;2024-09-11

4. Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs;IEEE Transactions on Electron Devices;2024-09

5. Exploring the Impact of Channel Thickness Scaling on PBTI and Low-Frequency Noise in Ultrathin IGZO Transistors;IEEE Transactions on Electron Devices;2024-09