One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond

Published:2023-09-11 Issue: Volume: Page:
ISSN:
Container-title:ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
language:
Short-container-title:

Author:

Matsuzawa Yuya¹,Ohnishi Yuki¹,Katono Kazuhiro¹,Muto Yusuke¹,Tsukagoshi Takayuki¹,Tokuhira Hiroki¹,Sakamoto Kei¹,Matsumori Hisakazu¹,Ode Hiroyuki¹,Fujii Shosuke¹,Tanaka Hide¹,Fujimaki Takeshi¹

Affiliation:

1. Kioxia Corporation,Institute of Memory Technology R&D,Yokkaichi,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10268496/10268469/10268477.pdf?arnumber=10268477

Reference11 articles.

1. Extremely high performance, high density 20nm self-selecting cross-point memory for Compute Express Link

2. Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

3. A No-Verification Multi-Level-Cell (MLC) Operation in Cross-Point OTS-PCM

4. High-performance, cost-effective 2z nm two-deck cross-point memory integrated by self-align scheme for 128 Gb SCM

5. First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD Modeling of Carbon Electrode for Highly Accurate Reset Current Prediction of Phase Change Memory Considering Both Thermal and Electronic Transport;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP