TCAD Modeling of Carbon Electrode for Highly Accurate Reset Current Prediction of Phase Change Memory Considering Both Thermal and Electronic Transport-Reference-Cited by-同舟云学术

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TCAD Modeling of Carbon Electrode for Highly Accurate Reset Current Prediction of Phase Change Memory Considering Both Thermal and Electronic Transport

Published:2023-09-27 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Author:

Tsukagoshi Takayuki¹,Tokuhira Hiroki¹,Nakai Tsukasa¹,Matsuzawa Yuya²,Masuda Ryouji²,Furuhashi Hironobu²,Fujii Shosuke²,Ode Hiroyuki²,Kusunoki Naoki¹

Affiliation:

1. Kioxia Corporation,Institute of Memory Technology R&D,Yokohama,Japan

2. Kioxia Corporation,Institute of Memory Technology R&D,Yokkaichi,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10319472/10319477/10319526.pdf?arnumber=10319526

Reference8 articles.

1. Density,sp3fraction, and cross-sectional structure of amorphous carbon films determined by x-ray reflectivity and electron energy-loss spectroscopy

2. Resistance switching at the nanometre scale in amorphous carbon

3. One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond

4. High-performance, cost-effective 2z nm two-deck cross-point memory integrated by self-align scheme for 128 Gb SCM

5. Thermal conductivity of diamond-like carbon films

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