Extremely high performance, high density 20nm self-selecting cross-point memory for Compute Express Link-Reference-Cited by-同舟云学术

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Extremely high performance, high density 20nm self-selecting cross-point memory for Compute Express Link

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Hong Seokman¹,Choi Hyejung¹,Park Jaehyuk¹,Bae Yoonchel¹,Kim Kyusung¹,Lee Wootae¹,Lee Seungyoon¹,Lee Hyungdong¹,Cho Seongrae¹,Ahn Joonkoo¹,Kim Seiyon¹,Kim Taehoon¹,Na Myunghee¹,Cha Seonyong¹

Affiliation:

1. R&D Division,SK-Hynix,Icheon,Republic of Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019415.pdf?arnumber=10019415

Reference9 articles.

1. Electro-Thermal Model for Thermal Disturbance in Cross-Point Phase-Change Memory

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chalcogenide Ovonic Threshold Switching Selector;Nano-Micro Letters;2024-01-11

2. One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

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