Electro-Thermal Model for Thermal Disturbance in Cross-Point Phase-Change Memory-Reference-Cited by-同舟云学术

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Electro-Thermal Model for Thermal Disturbance in Cross-Point Phase-Change Memory

Published:2020-04 Issue:4 Volume:67 Page:1454-1459
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yoo Sijung^ORCID,Lee Hyung Dong,Lee Seungyun,Choi Hyejung^ORCID,Kim Taehoon^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9046113/08961961.pdf?arnumber=8961961

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Subthreshold read operations in 3D PCM: 1S1R device modeling and memory array analysis;Microelectronic Engineering;2024-09

2. Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses;Science China Information Sciences;2024-04-19

3. Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Testing Algorithms for Hard to Detect Thermal Crosstalk Induced Write Disturb Faults in Phase Change Memories;2024 Design, Automation & Test in Europe Conference & Exhibition (DATE);2024-03-25

5. Cell Design Considerations for Ovonic Threshold Switch-Based 3-D Cross-Point Array;IEEE Transactions on Electron Devices;2023-03

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