Cell Design Considerations for Ovonic Threshold Switch-Based 3-D Cross-Point Array
Author:
Affiliation:
1. Department of Material Science and Engineering, Center for Single Atom-Based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, South Korea
2. SK Hynix Inc., Icheon-si, Gyeonggi-do, South Korea
Funder
National Research Foundation of Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10053598/10024140.pdf?arnumber=10024140
Reference25 articles.
1. Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond
2. Electro-Thermal Model for Thermal Disturbance in Cross-Point Phase-Change Memory
3. Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance
4. Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory
5. Programming algorithms for multilevel phase-change memory
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