A No-Verification Multi-Level-Cell (MLC) Operation in Cross-Point OTS-PCM-Reference-Cited by-同舟云学术

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A No-Verification Multi-Level-Cell (MLC) Operation in Cross-Point OTS-PCM

Published:2020-06 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Symposium on VLSI Technology
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Author:

Gong N.,Chien W.,Chou Y.,Yeh C.,Li N.,Cheng H.,Cheng C.,Kuo I.,Yang C.,Bruce R.,Ray A.,Gignac L.,Lin Y.,Miller C.,Perri T.,Kim W.,Buzi L.,Utomo H.,Carta F.,Lai E.,Ho H.,Lung H.,BrightSky M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9264988/9264985/09265020.pdf?arnumber=9265020

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Programming Operations Analysis and Statistics in One Selector and One Memory Ovonic Threshold Switching + Phase‐Change Memory Double‐Patterned Self‐Aligned Structure;physica status solidi (RRL) – Rapid Research Letters;2024-02-17

2. Excellent Reliability Characteristics of Ovonic Threshold Switch Device with Higher‐Temperature Forming Technique;physica status solidi (RRL) – Rapid Research Letters;2023-12-10

3. One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

4. Defect Engineering of BTe Ovonic Threshold Switch (OTS) With Nitrogen Doping for Improved Electrical and Reliability Performance;IEEE Electron Device Letters;2023-09

5. Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states;Applied Physics Letters;2023-08-14

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