Defect Engineering of BTe Ovonic Threshold Switch (OTS) With Nitrogen Doping for Improved Electrical and Reliability Performance-Reference-Cited by-同舟云学术

Defect Engineering of BTe Ovonic Threshold Switch (OTS) With Nitrogen Doping for Improved Electrical and Reliability Performance

Published:2023-09 Issue:9 Volume:44 Page:1468-1471
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Jangseop¹^ORCID,Ban Sanghyun¹^ORCID,Lee Tae Hoon²,Hwang Hyunsang¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea

2. School of Material Science and Engineering, Kyungpook National University, Daegu, Republic of Korea

Funder

Western Digital Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10230308/10190772.pdf?arnumber=10190772

Reference22 articles.

1. Effect of Silicon Doping in B–Te (B₄Te₆) Binary Ovonic Threshold Switch System

2. Threshold Voltage Drift in Te-Based Ovonic Threshold Switch Devices Under Various Operation Conditions

3. Mg-Te OTS selector with low Ioff (< 100 pA), fast switching speed (Td = 7 ns), and high thermal stability (400 °C/30min) for X-point memory applications;lee;Proc Symp VLSI Tech Dig,2021

4. A No-Verification Multi-Level-Cell (MLC) Operation in Cross-Point OTS-PCM

5. Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance

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